Chemical distortion microscope - List of Manufacturers, Suppliers, Companies and Products

Chemical distortion microscope Product List

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Tohoku University Technology: Holographic optical element and its manufacturing method: T17-106

Conversion of depth information linearly into planar information!

In 3D imaging, it is important to effectively encode z information, which is the image formation displacement of the target object, into XY information, which is displacement from the optical axis of the image surface. On the other hand, in single-pixel imaging using only a single detector, it is important to encode in efficient manner the XY information of the target into the time information. However, the conventional encoding method has a limit on distance resolution, imaging distance range, z information decoding accuracy and encryption uniqueness. This invention provides a new and improved hologram optical element, its manufacturing method and an optical device able to mutually convert Z & XY information with simple configuration. This invention is able to realize high accuracy and high spatial resolution for high-speed 3D imaging (patent US10816474) by converting the object depth direction information of the optical detection system into the planar direction information at the detecting surface.

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Tohoku University Technology: High Frequency-Enhanced ESM: T19-796

Enabling to evaluate low-conductivity material

Electrochemical strain microscopy (ESM) is known as a technique for probing ion mobility, ion conductivity, etc. in a solid material at a nanoscale. The ESM method is a method for detecting a signal of a local volume change (electrochemical distortion) of a solid generated with the movement of ions by applying a voltage, and for imaging and outputting the detected signal.  The ESM method provides an image showing the distribution of ion motion states, but the sharpness of the image depends on the ionic conductivity of the solid material. Therefore, in a solid material having a relatively low ionic conductivity, sufficient S/N ratio cannot be obtained, and it is difficult to evaluate the motion state of ions with high accuracy.  The present invention has been made in view of the above circumstances, and by applying a high-frequency bias voltage, it is possible to dramatically enhance a response signal generated in accordance with a motion state of ions. According to the present invention, even in a material having a relatively low ionic conductivity, a distribution image can be obtained with sufficient sharpness.

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